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By Karl Schneider

ISBN-10: 3866440219

ISBN-13: 9783866440210

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Additional info for Broadband Amplifiers for High Data Rates using InP InGaAs Double Heterojunction Bipolar Transistors

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The collector and the base are connected through via holes in the BCB. 7. 2. 5: SEM top view of an HBT. A cross-section of an identical device is shown in Fig. 6. A schematic of the transistor layout is shown in Fig. 25. 6: SEM pictures of HBT cross-section. 18 2. 7: Schematic of the process showing elements available for circuit design including NiCr resistors and silicon nitride MIM capacitors. The process includes thin film MIM capacitors (23 fF/μm2 ), NiCr resistors (50 Ω/ ), and three levels of Au-based interconnect metals.

30 2. 19: Comparison of output characteristics from different layer structures at a base current of 200 μA. Layer structure C displays the lowest turn-on and saturation voltage as well as the highest current gain. 20: Comparison of the Gummel plots from layer structure B and C. The current blocking in structure C is only weak, as the kink at 1 V is moderate. 3. 21: Comparison of the measured current gains from all three structures. The current gain of structure C reaches 90 at its maximum and the current compression sets in at higher currents than for the other structures.

9). The total thickness of the collector layer is 240 nm. A schematic band diagram of a DHBT with step graded collector is shown in Fig. 2. Experimental Results The characteristics of the layer structure were investigated by measuring an HBT with an emitter area of 10 μm2 . The resulting output characteristic and Gummel plot are shown in Figs. 11, respectively. 22 2. 10: Output characteristic of a transistor from layer structure A. 11: Measured Gummel plot of a transistor with an emitter area of 10 μm2 from layer structure A.

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Broadband Amplifiers for High Data Rates using InP InGaAs Double Heterojunction Bipolar Transistors by Karl Schneider

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